| Hersteller | |
| Hersteller-Teilenummer | NTZD3154NT1G |
| EBEE-Teilenummer | E8145189 |
| Gehäuse | SOT-563 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 20V 540mA 250mW 400mΩ@4.5V,540mA 1V@250uA 2 N-Channel SOT-563 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0561 | $ 0.5610 |
| 100+ | $0.0450 | $ 4.5000 |
| 300+ | $0.0394 | $ 11.8200 |
| 1000+ | $0.0353 | $ 35.3000 |
| 4000+ | $0.0320 | $ 128.0000 |
| 8000+ | $0.0302 | $ 241.6000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | onsemi NTZD3154NT1G | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 2 N-Channel | |
| Drain Source Voltage (Vdss) | 20V | |
| Continuous Drain Current (Id) | 540mA | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 400mΩ@4.5V,540mA | |
| Power Dissipation (Pd) | 250mW | |
| Gate Threshold Voltage (Vgs(th)@Id) | 1V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF@ | |
| Input Capacitance (Ciss@Vds) | 150pF@ | |
| Total Gate Charge (Qg@Vgs) | [email protected] |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0561 | $ 0.5610 |
| 100+ | $0.0450 | $ 4.5000 |
| 300+ | $0.0394 | $ 11.8200 |
| 1000+ | $0.0353 | $ 35.3000 |
| 4000+ | $0.0320 | $ 128.0000 |
| 8000+ | $0.0302 | $ 241.6000 |
