| Hersteller | |
| Hersteller-Teilenummer | NTTFS4C25NTWG |
| EBEE-Teilenummer | E8893914 |
| Gehäuse | WDFN-8(3.3x3.3) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 30V 27A 17mΩ@10V 20.2W 2.2V@250uA 1 N-Channel WDFN-8(3.3x3.3) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.2124 | $ 1.0620 |
| 50+ | $0.1857 | $ 9.2850 |
| 150+ | $0.1743 | $ 26.1450 |
| 500+ | $0.1497 | $ 74.8500 |
| 2500+ | $0.1433 | $ 358.2500 |
| 5000+ | $0.1395 | $ 697.5000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistors/Thyristors ,MOSFETs | |
| Datenblatt | onsemi NTTFS4C25NTWG | |
| RoHS | ||
| RDS(on) | 17mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 85pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 20.2W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Current - Continuous Drain(Id) | 27A | |
| Ciss-Input Capacitance | 500pF | |
| Gate Charge(Qg) | 5.1nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.2124 | $ 1.0620 |
| 50+ | $0.1857 | $ 9.2850 |
| 150+ | $0.1743 | $ 26.1450 |
| 500+ | $0.1497 | $ 74.8500 |
| 2500+ | $0.1433 | $ 358.2500 |
| 5000+ | $0.1395 | $ 697.5000 |
