5% off
| Hersteller | |
| Hersteller-Teilenummer | 5N10-MS |
| EBEE-Teilenummer | E85140036 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 100V 5A 105mΩ 1 N-Channel SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0391 | $ 0.3910 |
| 100+ | $0.0319 | $ 3.1900 |
| 300+ | $0.0283 | $ 8.4900 |
| 3000+ | $0.0213 | $ 63.9000 |
| 6000+ | $0.0191 | $ 114.6000 |
| 9000+ | $0.0181 | $ 162.9000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | MSKSEMI 5N10-MS | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 90mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 33pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 2.5W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Current - Continuous Drain(Id) | 5A | |
| Ciss-Input Capacitance | 765pF | |
| Output Capacitance(Coss) | 38pF | |
| Gate Charge(Qg) | 18nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0391 | $ 0.3910 |
| 100+ | $0.0319 | $ 3.1900 |
| 300+ | $0.0283 | $ 8.4900 |
| 3000+ | $0.0213 | $ 63.9000 |
| 6000+ | $0.0191 | $ 114.6000 |
| 9000+ | $0.0181 | $ 162.9000 |
