10% off
| Hersteller | |
| Hersteller-Teilenummer | 2N7002W |
| EBEE-Teilenummer | E85174639 |
| Gehäuse | SOT-323 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 60V 200mA 1.6Ω@10V 156mW 3V 1 N-Channel SOT-323 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0219 | $ 0.4380 |
| 200+ | $0.0174 | $ 3.4800 |
| 600+ | $0.0149 | $ 8.9400 |
| 3000+ | $0.0122 | $ 36.6000 |
| 9000+ | $0.0109 | $ 98.1000 |
| 21000+ | $0.0103 | $ 216.3000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | MSKSEMI 2N7002W | |
| RoHS | ||
| RDS(on) | 1.6Ω@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 6.8pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 156mW | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Current - Continuous Drain(Id) | 200mA | |
| Ciss-Input Capacitance | 25pF | |
| Output Capacitance(Coss) | 15pF | |
| Gate Charge(Qg) | 2nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0219 | $ 0.4380 |
| 200+ | $0.0174 | $ 3.4800 |
| 600+ | $0.0149 | $ 8.9400 |
| 3000+ | $0.0122 | $ 36.6000 |
| 9000+ | $0.0109 | $ 98.1000 |
| 21000+ | $0.0103 | $ 216.3000 |
