50% off
| Hersteller | |
| Hersteller-Teilenummer | MPP10N65 |
| EBEE-Teilenummer | E817701987 |
| Gehäuse | PTO-252 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 650V 10A 800mΩ 1 N-channel PTO-252 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.2241 | $ 0.2241 |
| 10+ | $0.1781 | $ 1.7810 |
| 30+ | $0.1584 | $ 4.7520 |
| 100+ | $0.1338 | $ 13.3800 |
| 500+ | $0.1227 | $ 61.3500 |
| 1000+ | $0.1156 | $ 115.6000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | miracle MPP10N65 | |
| RoHS | ||
| Typ | - | |
| RDS(on) | - | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 6.6pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 100W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 10A | |
| Ciss-Input Capacitance | 1.595nF | |
| Output Capacitance(Coss) | 134pF | |
| Gate Charge(Qg) | 31.9nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.2241 | $ 0.2241 |
| 10+ | $0.1781 | $ 1.7810 |
| 30+ | $0.1584 | $ 4.7520 |
| 100+ | $0.1338 | $ 13.3800 |
| 500+ | $0.1227 | $ 61.3500 |
| 1000+ | $0.1156 | $ 115.6000 |
