| Hersteller | |
| Hersteller-Teilenummer | VP2450N8-G |
| EBEE-Teilenummer | E8144242 |
| Gehäuse | SOT-89 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 500V 200mA 1.6W 30Ω@10V,100mA 1.5V@1mA 1 Piece P-Channel SOT-89-3 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $4.6726 | $ 4.6726 |
| 10+ | $4.0804 | $ 40.8040 |
| 30+ | $3.7295 | $ 111.8850 |
| 100+ | $3.3739 | $ 337.3900 |
| 500+ | $3.2104 | $ 1605.2000 |
| 1000+ | $3.1357 | $ 3135.7000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | Microchip Tech VP2450N8-G | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 30Ω@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 20pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 1.6W | |
| Drain to Source Voltage | 500V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Current - Continuous Drain(Id) | 160mA | |
| Ciss-Input Capacitance | 190pF | |
| Output Capacitance(Coss) | 75pF | |
| Gate Charge(Qg) | - |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $4.6726 | $ 4.6726 |
| 10+ | $4.0804 | $ 40.8040 |
| 30+ | $3.7295 | $ 111.8850 |
| 100+ | $3.3739 | $ 337.3900 |
| 500+ | $3.2104 | $ 1605.2000 |
| 1000+ | $3.1357 | $ 3135.7000 |
