| Hersteller | |
| Hersteller-Teilenummer | LND150N8-G |
| EBEE-Teilenummer | E8629123 |
| Gehäuse | SOT-89 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 500V 30mW 1000Ω@0V,0.5mA 1V@100nA 1 N-channel SOT-89-3 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.6052 | $ 1.6052 |
| 10+ | $1.3591 | $ 13.5910 |
| 30+ | $1.2226 | $ 36.6780 |
| 100+ | $1.0702 | $ 107.0200 |
| 500+ | $1.0019 | $ 500.9500 |
| 1000+ | $0.9701 | $ 970.1000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | Microchip Tech LND150N8-G | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 1kΩ@0V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 1pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 1.6W | |
| Drain to Source Voltage | 500V | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Current - Continuous Drain(Id) | 30mA | |
| Ciss-Input Capacitance | 10pF |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.6052 | $ 1.6052 |
| 10+ | $1.3591 | $ 13.5910 |
| 30+ | $1.2226 | $ 36.6780 |
| 100+ | $1.0702 | $ 107.0200 |
| 500+ | $1.0019 | $ 500.9500 |
| 1000+ | $0.9701 | $ 970.1000 |
