5% off
| Hersteller | |
| Hersteller-Teilenummer | MDD3407 |
| EBEE-Teilenummer | E8427386 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 30V 4.1A 43mΩ@10V,4A 1.2W 1.6V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0352 | $ 0.3520 |
| 100+ | $0.0286 | $ 2.8600 |
| 300+ | $0.0249 | $ 7.4700 |
| 3000+ | $0.0218 | $ 65.4000 |
| 6000+ | $0.0199 | $ 119.4000 |
| 9000+ | $0.0188 | $ 169.2000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | MDD(Microdiode Semiconductor) MDD3407 | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 43mΩ@10V;66mΩ@4.5V | |
| Betriebstemperatur - | - | |
| Reverse Transfer Capacitance (Crss-Vds) | 44pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 1.2W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Current - Continuous Drain(Id) | 4.1A | |
| Ciss-Input Capacitance | 493pF | |
| Output Capacitance(Coss) | 65pF | |
| Gate Charge(Qg) | 8.2nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0352 | $ 0.3520 |
| 100+ | $0.0286 | $ 2.8600 |
| 300+ | $0.0249 | $ 7.4700 |
| 3000+ | $0.0218 | $ 65.4000 |
| 6000+ | $0.0199 | $ 119.4000 |
| 9000+ | $0.0188 | $ 169.2000 |
