| Hersteller | |
| Hersteller-Teilenummer | MDD3400 |
| EBEE-Teilenummer | E8427382 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| Beschreibung | 30V 5.8A 27mΩ@10V 1.5W 1.2V@250uA 1 N-Channel SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0312 | $ 0.6240 |
| 200+ | $0.0255 | $ 5.1000 |
| 600+ | $0.0223 | $ 13.3800 |
| 3000+ | $0.0163 | $ 48.9000 |
| 9000+ | $0.0146 | $ 131.4000 |
| 21000+ | $0.0137 | $ 287.7000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | MDD(Microdiode Semiconductor) MDD3400 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 20mΩ@10V | |
| Betriebstemperatur - | -50℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 40pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 1.5W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 800mV | |
| Current - Continuous Drain(Id) | 5.8A | |
| Ciss-Input Capacitance | 635pF | |
| Output Capacitance(Coss) | 135pF | |
| Gate Charge(Qg) | [email protected] |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0312 | $ 0.6240 |
| 200+ | $0.0255 | $ 5.1000 |
| 600+ | $0.0223 | $ 13.3800 |
| 3000+ | $0.0163 | $ 48.9000 |
| 9000+ | $0.0146 | $ 131.4000 |
| 21000+ | $0.0137 | $ 287.7000 |
