| Hersteller | |
| Hersteller-Teilenummer | MDD2301 |
| EBEE-Teilenummer | E8427391 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| Beschreibung | 20V 3A 70mΩ@4.5V 900mW 600mV@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0179 | $ 0.3580 |
| 200+ | $0.0163 | $ 3.2600 |
| 600+ | $0.0154 | $ 9.2400 |
| 3000+ | $0.0096 | $ 28.8000 |
| 9000+ | $0.0092 | $ 82.8000 |
| 21000+ | $0.0089 | $ 186.9000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | MDD(Microdiode Semiconductor) MDD2301 | |
| RoHS | ||
| RDS(on) | 33mΩ@4.5V | |
| Betriebstemperatur - | -50℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 45pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 900mW | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Current - Continuous Drain(Id) | 3.8A | |
| Ciss-Input Capacitance | 330pF | |
| Output Capacitance(Coss) | 50pF | |
| Gate Charge(Qg) | 800pC |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0179 | $ 0.3580 |
| 200+ | $0.0163 | $ 3.2600 |
| 600+ | $0.0154 | $ 9.2400 |
| 3000+ | $0.0096 | $ 28.8000 |
| 9000+ | $0.0092 | $ 82.8000 |
| 21000+ | $0.0089 | $ 186.9000 |
