5% off
| Hersteller | |
| Hersteller-Teilenummer | MDD2300 |
| EBEE-Teilenummer | E8427387 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| Beschreibung | 20V 6.2A 19.4mΩ@4.5V 1.56W 1V@250uA 1 N-Channel SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0209 | $ 0.4180 |
| 200+ | $0.0168 | $ 3.3600 |
| 600+ | $0.0145 | $ 8.7000 |
| 3000+ | $0.0126 | $ 37.8000 |
| 9000+ | $0.0115 | $ 103.5000 |
| 21000+ | $0.0108 | $ 226.8000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | MDD(Microdiode Semiconductor) MDD2300 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 21.7mΩ@4.5V;29mΩ@2.5V | |
| Betriebstemperatur - | -50℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 66pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 1.56W | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 600mV | |
| Current - Continuous Drain(Id) | 6.2A | |
| Ciss-Input Capacitance | 457pF | |
| Output Capacitance(Coss) | 71pF | |
| Gate Charge(Qg) | 6.6nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0209 | $ 0.4180 |
| 200+ | $0.0168 | $ 3.3600 |
| 600+ | $0.0145 | $ 8.7000 |
| 3000+ | $0.0126 | $ 37.8000 |
| 9000+ | $0.0115 | $ 103.5000 |
| 21000+ | $0.0108 | $ 226.8000 |
