| Hersteller | |
| Hersteller-Teilenummer | MS5N100FE |
| EBEE-Teilenummer | E83825153 |
| Gehäuse | TO-263 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 1kV 5A 56W 4.2Ω@10V,1.75A 3.5V@100uA 1 N-channel TO-263 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.6442 | $ 0.6442 |
| 10+ | $0.5207 | $ 5.2070 |
| 30+ | $0.4590 | $ 13.7700 |
| 100+ | $0.3973 | $ 39.7300 |
| 500+ | $0.3435 | $ 171.7500 |
| 800+ | $0.3245 | $ 259.6000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | MASPOWER MS5N100FE | |
| RoHS | ||
| RDS(on) | 3.5Ω@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 3pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 198W | |
| Drain to Source Voltage | 1kV | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 5A | |
| Ciss-Input Capacitance | 506pF | |
| Output Capacitance(Coss) | 59pF | |
| Gate Charge(Qg) | 18.68nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.6442 | $ 0.6442 |
| 10+ | $0.5207 | $ 5.2070 |
| 30+ | $0.4590 | $ 13.7700 |
| 100+ | $0.3973 | $ 39.7300 |
| 500+ | $0.3435 | $ 171.7500 |
| 800+ | $0.3245 | $ 259.6000 |
