| Hersteller | |
| Hersteller-Teilenummer | S-L2N7002SLT1G |
| EBEE-Teilenummer | E8559089 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 60V 380mA 2.8Ω@10V,500mA 300mW 2V@250uA 1 N-Channel SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 50+ | $0.0211 | $ 1.0550 |
| 500+ | $0.0169 | $ 8.4500 |
| 3000+ | $0.0146 | $ 43.8000 |
| 6000+ | $0.0133 | $ 79.8000 |
| 24000+ | $0.0121 | $ 290.4000 |
| 51000+ | $0.0114 | $ 581.4000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | LRC S-L2N7002SLT1G | |
| RoHS | ||
| RDS(on) | 2.8Ω@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 5pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 300mW | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Current - Continuous Drain(Id) | 380mA | |
| Ciss-Input Capacitance | 35pF | |
| Gate Charge(Qg) | [email protected] |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 50+ | $0.0211 | $ 1.0550 |
| 500+ | $0.0169 | $ 8.4500 |
| 3000+ | $0.0146 | $ 43.8000 |
| 6000+ | $0.0133 | $ 79.8000 |
| 24000+ | $0.0121 | $ 290.4000 |
| 51000+ | $0.0114 | $ 581.4000 |
