| Hersteller | |
| Hersteller-Teilenummer | IXTQ82N25P |
| EBEE-Teilenummer | E8426677 |
| Gehäuse | TO-3P-3 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 250V 5V@250uA 1 N-channel TO-3P-3 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $5.0814 | $ 5.0814 |
| 10+ | $4.4062 | $ 44.0620 |
| 30+ | $4.0055 | $ 120.1650 |
| 90+ | $3.6001 | $ 324.0090 |
| 450+ | $3.4139 | $ 1536.2550 |
| 900+ | $3.3287 | $ 2995.8300 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | Littelfuse/IXYS IXTQ82N25P | |
| RoHS | ||
| Typ | N-Channel | |
| Konfiguration | - | |
| RDS(on) | 38mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 210pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 500W | |
| Drain to Source Voltage | 250V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Current - Continuous Drain(Id) | 82A | |
| Ciss-Input Capacitance | 4.8nF | |
| Output Capacitance(Coss) | 900pF | |
| Gate Charge(Qg) | - |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $5.0814 | $ 5.0814 |
| 10+ | $4.4062 | $ 44.0620 |
| 30+ | $4.0055 | $ 120.1650 |
| 90+ | $3.6001 | $ 324.0090 |
| 450+ | $3.4139 | $ 1536.2550 |
| 900+ | $3.3287 | $ 2995.8300 |
