| Hersteller | |
| Hersteller-Teilenummer | IXTX200N10L2 |
| EBEE-Teilenummer | E87211789 |
| Gehäuse | PLUS-247 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 100V 200A 1.04kW 11mΩ@10V 2V@3mA MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $40.3435 | $ 40.3435 |
| 30+ | $38.5782 | $ 1157.3460 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistors/Thyristors ,MOSFETs | |
| Datenblatt | Littelfuse IXTX200N10L2 | |
| RoHS | ||
| RDS(on) | 11mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 610pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 1.04kW | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Current - Continuous Drain(Id) | 200A | |
| Ciss-Input Capacitance | 23nF | |
| Gate Charge(Qg) | 540nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $40.3435 | $ 40.3435 |
| 30+ | $38.5782 | $ 1157.3460 |
