| Hersteller | |
| Hersteller-Teilenummer | LGE2310 |
| EBEE-Teilenummer | E827975290 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0456 | $ 0.4560 |
| 100+ | $0.0365 | $ 3.6500 |
| 300+ | $0.0319 | $ 9.5700 |
| 3000+ | $0.0285 | $ 85.5000 |
| 6000+ | $0.0257 | $ 154.2000 |
| 9000+ | $0.0244 | $ 219.6000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | LGE LGE2310 | |
| RoHS | ||
| RDS(on) | 125mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 19.5pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 350mW | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Current - Continuous Drain(Id) | 3A | |
| Ciss-Input Capacitance | 247pF | |
| Output Capacitance(Coss) | 34pF | |
| Gate Charge(Qg) | [email protected] |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0456 | $ 0.4560 |
| 100+ | $0.0365 | $ 3.6500 |
| 300+ | $0.0319 | $ 9.5700 |
| 3000+ | $0.0285 | $ 85.5000 |
| 6000+ | $0.0257 | $ 154.2000 |
| 9000+ | $0.0244 | $ 219.6000 |
