20% off
| Hersteller | |
| Hersteller-Teilenummer | LGE2300 |
| EBEE-Teilenummer | E822388880 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0239 | $ 0.4780 |
| 200+ | $0.0188 | $ 3.7600 |
| 600+ | $0.0159 | $ 9.5400 |
| 3000+ | $0.0142 | $ 42.6000 |
| 9000+ | $0.0127 | $ 114.3000 |
| 21000+ | $0.0119 | $ 249.9000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | LGE LGE2300 | |
| RoHS | ||
| RDS(on) | 40mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss-Vds) | 60pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 1.25W | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Current - Continuous Drain(Id) | 5.2A | |
| Ciss-Input Capacitance | 630pF | |
| Output Capacitance(Coss) | 150pF | |
| Gate Charge(Qg) | [email protected] |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0239 | $ 0.4780 |
| 200+ | $0.0188 | $ 3.7600 |
| 600+ | $0.0159 | $ 9.5400 |
| 3000+ | $0.0142 | $ 42.6000 |
| 9000+ | $0.0127 | $ 114.3000 |
| 21000+ | $0.0119 | $ 249.9000 |
