| Hersteller | |
| Hersteller-Teilenummer | LGE03N06BF |
| EBEE-Teilenummer | E822388879 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0364 | $ 0.7280 |
| 200+ | $0.0288 | $ 5.7600 |
| 600+ | $0.0250 | $ 15.0000 |
| 3000+ | $0.0221 | $ 66.3000 |
| 9000+ | $0.0199 | $ 179.1000 |
| 21000+ | $0.0187 | $ 392.7000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | LGE LGE03N06BF | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 100mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss-Vds) | 17pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 1.2W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Current - Continuous Drain(Id) | 3A | |
| Ciss-Input Capacitance | 330pF | |
| Output Capacitance(Coss) | 90pF | |
| Gate Charge(Qg) | 5.1nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0364 | $ 0.7280 |
| 200+ | $0.0288 | $ 5.7600 |
| 600+ | $0.0250 | $ 15.0000 |
| 3000+ | $0.0221 | $ 66.3000 |
| 9000+ | $0.0199 | $ 179.1000 |
| 21000+ | $0.0187 | $ 392.7000 |
