| Hersteller | |
| Hersteller-Teilenummer | 2N7002DW |
| EBEE-Teilenummer | E827975286 |
| Gehäuse | SOT-363 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | SOT-363 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0330 | $ 0.6600 |
| 200+ | $0.0257 | $ 5.1400 |
| 600+ | $0.0217 | $ 13.0200 |
| 3000+ | $0.0192 | $ 57.6000 |
| 9000+ | $0.0171 | $ 153.9000 |
| 21000+ | $0.0160 | $ 336.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | LGE 2N7002DW | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 5Ω@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 5pF | |
| Number | 2 N-Channel | |
| Pd - Power Dissipation | 150mW | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 115mA | |
| Ciss-Input Capacitance | 50pF | |
| Output Capacitance(Coss) | 25pF |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0330 | $ 0.6600 |
| 200+ | $0.0257 | $ 5.1400 |
| 600+ | $0.0217 | $ 13.0200 |
| 3000+ | $0.0192 | $ 57.6000 |
| 9000+ | $0.0171 | $ 153.9000 |
| 21000+ | $0.0160 | $ 336.0000 |
