| Hersteller | |
| Hersteller-Teilenummer | KY5853DC |
| EBEE-Teilenummer | E83029307 |
| Gehäuse | DFNWB-8-EP(2x3) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| Beschreibung | 20V 2.7A 110mΩ@4.5V,2.7A 1.1W 450mV@250uA 1 Piece P-Channel DFNWB-8-EP(2x3) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0513 | $ 0.5130 |
| 100+ | $0.0408 | $ 4.0800 |
| 300+ | $0.0356 | $ 10.6800 |
| 1000+ | $0.0316 | $ 31.6000 |
| 5000+ | $0.0273 | $ 136.5000 |
| 10000+ | $0.0257 | $ 257.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | KY KY5853DC | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 240mΩ@1.8V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 50pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 1.1W | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 450mV | |
| Current - Continuous Drain(Id) | 2.7A | |
| Ciss-Input Capacitance | 300pF | |
| Gate Charge(Qg) | [email protected] |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0513 | $ 0.5130 |
| 100+ | $0.0408 | $ 4.0800 |
| 300+ | $0.0356 | $ 10.6800 |
| 1000+ | $0.0316 | $ 31.6000 |
| 5000+ | $0.0273 | $ 136.5000 |
| 10000+ | $0.0257 | $ 257.0000 |
