| Hersteller | |
| Hersteller-Teilenummer | KY3117DC |
| EBEE-Teilenummer | E83029308 |
| Gehäuse | DFNWB-6-EP(2x2) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| Beschreibung | 20V 2.6A 100mΩ@4.5V,2A 750mW 1V@250uA 1 Piece P-Channel DFNWB-6-EP(2x2) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0466 | $ 0.4660 |
| 100+ | $0.0371 | $ 3.7100 |
| 300+ | $0.0323 | $ 9.6900 |
| 3000+ | $0.0277 | $ 83.1000 |
| 6000+ | $0.0248 | $ 148.8000 |
| 9000+ | $0.0234 | $ 210.6000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | KY KY3117DC | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 250mΩ@1.8V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 56pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 750mW | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Current - Continuous Drain(Id) | 2.6A | |
| Ciss-Input Capacitance | 531pF | |
| Output Capacitance(Coss) | 91pF | |
| Gate Charge(Qg) | 6.2nC@0V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0466 | $ 0.4660 |
| 100+ | $0.0371 | $ 3.7100 |
| 300+ | $0.0323 | $ 9.6900 |
| 3000+ | $0.0277 | $ 83.1000 |
| 6000+ | $0.0248 | $ 148.8000 |
| 9000+ | $0.0234 | $ 210.6000 |
