| Hersteller | |
| Hersteller-Teilenummer | KY2310L |
| EBEE-Teilenummer | E83029303 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 60V 3A 350mW 83mΩ@10V,3A 950mV@250uA 1 N-Channel SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0412 | $ 0.4120 |
| 100+ | $0.0332 | $ 3.3200 |
| 300+ | $0.0293 | $ 8.7900 |
| 3000+ | $0.0231 | $ 69.3000 |
| 6000+ | $0.0207 | $ 124.2000 |
| 9000+ | $0.0196 | $ 176.4000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | KY KY2310L | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 120mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 19.5pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 350mW | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Current - Continuous Drain(Id) | 3A | |
| Ciss-Input Capacitance | 247pF | |
| Gate Charge(Qg) | 6nC |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0412 | $ 0.4120 |
| 100+ | $0.0332 | $ 3.3200 |
| 300+ | $0.0293 | $ 8.7900 |
| 3000+ | $0.0231 | $ 69.3000 |
| 6000+ | $0.0207 | $ 124.2000 |
| 9000+ | $0.0196 | $ 176.4000 |
