| Hersteller | |
| Hersteller-Teilenummer | KSI2305CDS-T1-GE3 |
| EBEE-Teilenummer | E82891686 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 20V 4A 65mΩ@4.5V,3.2A 1.1W 1V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0376 | $ 0.7520 |
| 200+ | $0.0303 | $ 6.0600 |
| 600+ | $0.0262 | $ 15.7200 |
| 3000+ | $0.0215 | $ 64.5000 |
| 9000+ | $0.0194 | $ 174.6000 |
| 21000+ | $0.0182 | $ 382.2000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistors/Thyristors ,MOSFETs | |
| Datenblatt | KUU KSI2305CDS-T1-GE3 | |
| RoHS | ||
| Type | P-Channel | |
| Configuration | - | |
| RDS(on) | 85mΩ@2.5V | |
| Operating Temperature - | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 87pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 1.1W | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Current - Continuous Drain(Id) | 4A | |
| Ciss-Input Capacitance | 415pF | |
| Output Capacitance(Coss) | 223pF | |
| Gate Charge(Qg) | [email protected] |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0376 | $ 0.7520 |
| 200+ | $0.0303 | $ 6.0600 |
| 600+ | $0.0262 | $ 15.7200 |
| 3000+ | $0.0215 | $ 64.5000 |
| 9000+ | $0.0194 | $ 174.6000 |
| 21000+ | $0.0182 | $ 382.2000 |
