| Hersteller | |
| Hersteller-Teilenummer | FQPF4N60SE |
| EBEE-Teilenummer | E842404740 |
| Gehäuse | TO-220F |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | TO-220F MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1821 | $ 0.9105 |
| 50+ | $0.1430 | $ 7.1500 |
| 150+ | $0.1262 | $ 18.9300 |
| 500+ | $0.1053 | $ 52.6500 |
| 2500+ | $0.0960 | $ 240.0000 |
| 5000+ | $0.0904 | $ 452.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | KTP FQPF4N60SE | |
| RoHS | ||
| Typ | N-Channel | |
| Konfiguration | - | |
| RDS(on) | 2.5Ω@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 5.4pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 50W | |
| Drain to Source Voltage | 600V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 4A | |
| Ciss-Input Capacitance | 560pF | |
| Output Capacitance(Coss) | 48pF | |
| Gate Charge(Qg) | 14.3nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1821 | $ 0.9105 |
| 50+ | $0.1430 | $ 7.1500 |
| 150+ | $0.1262 | $ 18.9300 |
| 500+ | $0.1053 | $ 52.6500 |
| 2500+ | $0.0960 | $ 240.0000 |
| 5000+ | $0.0904 | $ 452.0000 |
