| Hersteller | |
| Hersteller-Teilenummer | 2KK6009DFN |
| EBEE-Teilenummer | E8499621 |
| Gehäuse | DFN1006-3 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | DFN1006-3 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0420 | $ 0.4200 |
| 100+ | $0.0333 | $ 3.3300 |
| 300+ | $0.0290 | $ 8.7000 |
| 1000+ | $0.0257 | $ 25.7000 |
| 5000+ | $0.0204 | $ 102.0000 |
| 10000+ | $0.0191 | $ 191.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | KEXIN 2KK6009DFN | |
| RoHS | ||
| RDS(on) | 800mΩ@1.8V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 15pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 100mW | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 350mV | |
| Current - Continuous Drain(Id) | 750mA | |
| Ciss-Input Capacitance | 120pF | |
| Gate Charge(Qg) | - |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0420 | $ 0.4200 |
| 100+ | $0.0333 | $ 3.3300 |
| 300+ | $0.0290 | $ 8.7000 |
| 1000+ | $0.0257 | $ 25.7000 |
| 5000+ | $0.0204 | $ 102.0000 |
| 10000+ | $0.0191 | $ 191.0000 |
