| Hersteller | |
| Hersteller-Teilenummer | 2KJ7102DFN |
| EBEE-Teilenummer | E8499624 |
| Gehäuse | PDFN-8(3.3x3.3) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | None |
| Beschreibung | 20V 8.8A 25mΩ@4.5V,2.5A 2.5W 650mV@250uA 2 P-Channel PDFN-8(3.3x3.3) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.1322 | $ 0.1322 |
| 10+ | $0.1158 | $ 1.1580 |
| 30+ | $0.1088 | $ 3.2640 |
| 100+ | $0.1000 | $ 10.0000 |
| 500+ | $0.0961 | $ 48.0500 |
| 1000+ | $0.0820 | $ 82.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | KEXIN 2KJ7102DFN | |
| RoHS | ||
| RDS(on) | 25mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 161pF | |
| Number | 2 P-Channel | |
| Pd - Power Dissipation | 2.5W | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 650mV | |
| Current - Continuous Drain(Id) | 8.8A | |
| Ciss-Input Capacitance | 1.275nF | |
| Gate Charge(Qg) | 33nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.1322 | $ 0.1322 |
| 10+ | $0.1158 | $ 1.1580 |
| 30+ | $0.1088 | $ 3.2640 |
| 100+ | $0.1000 | $ 10.0000 |
| 500+ | $0.0961 | $ 48.0500 |
| 1000+ | $0.0820 | $ 82.0000 |
