Hot
| Hersteller | |
| Hersteller-Teilenummer | IRF3205PBF |
| EBEE-Teilenummer | E82561 |
| Gehäuse | TO-220AB |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 55V 110A 8mΩ@10V,62A 200W 4V@250uA 1 N-Channel TO-220AB MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.4114 | $ 0.4114 |
| 10+ | $0.3246 | $ 3.2460 |
| 50+ | $0.2797 | $ 13.9850 |
| 100+ | $0.2427 | $ 24.2700 |
| 500+ | $0.2314 | $ 115.7000 |
| 1000+ | $0.2250 | $ 225.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | Infineon Technologies IRF3205PBF | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 8mΩ@10V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 211pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 200W | |
| Drain to Source Voltage | 55V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 110A | |
| Ciss-Input Capacitance | 3.247nF | |
| Gate Charge(Qg) | 146nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.4114 | $ 0.4114 |
| 10+ | $0.3246 | $ 3.2460 |
| 50+ | $0.2797 | $ 13.9850 |
| 100+ | $0.2427 | $ 24.2700 |
| 500+ | $0.2314 | $ 115.7000 |
| 1000+ | $0.2250 | $ 225.0000 |
