| Hersteller | |
| Hersteller-Teilenummer | BSS131H6327 |
| EBEE-Teilenummer | E8151498 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 240V 0.11A 360mW 7.7Ω@10V,0.1A 1.8V@56uA 1 N-channel SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1085 | $ 0.5425 |
| 50+ | $0.0858 | $ 4.2900 |
| 150+ | $0.0745 | $ 11.1750 |
| 500+ | $0.0659 | $ 32.9500 |
| 3000+ | $0.0591 | $ 177.3000 |
| 6000+ | $0.0557 | $ 334.2000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | Infineon Technologies BSS131H6327 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 14Ω@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 4.2pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 360mW | |
| Drain to Source Voltage | 240V | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Current - Continuous Drain(Id) | 110mA | |
| Ciss-Input Capacitance | 77pF | |
| Output Capacitance(Coss) | 10pF | |
| Gate Charge(Qg) | 3.1nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1085 | $ 0.5425 |
| 50+ | $0.0858 | $ 4.2900 |
| 150+ | $0.0745 | $ 11.1750 |
| 500+ | $0.0659 | $ 32.9500 |
| 3000+ | $0.0591 | $ 177.3000 |
| 6000+ | $0.0557 | $ 334.2000 |
