| Hersteller | |
| Hersteller-Teilenummer | AO3400-HXY |
| EBEE-Teilenummer | E84748804 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 30V 5.8A 28mΩ@10V,5.8A 1.4W 1.4V@250uA 1 N-Channel SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 50+ | $0.0218 | $ 1.0900 |
| 500+ | $0.0177 | $ 8.8500 |
| 3000+ | $0.0139 | $ 41.7000 |
| 6000+ | $0.0125 | $ 75.0000 |
| 24000+ | $0.0114 | $ 273.6000 |
| 51000+ | $0.0107 | $ 545.7000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistors/Thyristors ,MOSFETs | |
| Datenblatt | HXY MOSFET AO3400-HXY | |
| RoHS | ||
| RDS(on) | 30mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 78pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 1.4W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Current - Continuous Drain(Id) | 5.8A | |
| Ciss-Input Capacitance | 825pF | |
| Gate Charge(Qg) | - |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 50+ | $0.0218 | $ 1.0900 |
| 500+ | $0.0177 | $ 8.8500 |
| 3000+ | $0.0139 | $ 41.7000 |
| 6000+ | $0.0125 | $ 75.0000 |
| 24000+ | $0.0114 | $ 273.6000 |
| 51000+ | $0.0107 | $ 545.7000 |
