| Hersteller | |
| Hersteller-Teilenummer | HL3400 |
| EBEE-Teilenummer | E822469448 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 30V 5.6A 1.2W 21mΩ@10V,5.6A 900mV@250uA 1 N-Channel SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0299 | $ 0.5980 |
| 200+ | $0.0235 | $ 4.7000 |
| 600+ | $0.0199 | $ 11.9400 |
| 3000+ | $0.0163 | $ 48.9000 |
| 9000+ | $0.0145 | $ 130.5000 |
| 21000+ | $0.0135 | $ 283.5000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | hongjiacheng HL3400 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 21mΩ@10V;25mΩ@4.5V;33mΩ@2.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 71pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 1.2W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 900mV | |
| Current - Continuous Drain(Id) | 5.6A | |
| Ciss-Input Capacitance | 630pF | |
| Output Capacitance(Coss) | 90pF | |
| Gate Charge(Qg) | 17nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0299 | $ 0.5980 |
| 200+ | $0.0235 | $ 4.7000 |
| 600+ | $0.0199 | $ 11.9400 |
| 3000+ | $0.0163 | $ 48.9000 |
| 9000+ | $0.0145 | $ 130.5000 |
| 21000+ | $0.0135 | $ 283.5000 |
