| Hersteller | |
| Hersteller-Teilenummer | HL2309 |
| EBEE-Teilenummer | E828646263 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 60V 1.25A 340mΩ@10V,1.25A 1.25W 3V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0450 | $ 0.4500 |
| 100+ | $0.0397 | $ 3.9700 |
| 300+ | $0.0370 | $ 11.1000 |
| 3000+ | $0.0350 | $ 105.0000 |
| 6000+ | $0.0334 | $ 200.4000 |
| 9000+ | $0.0326 | $ 293.4000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | hongjiacheng HL2309 | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 275mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 6pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 1.25W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 1.25A | |
| Ciss-Input Capacitance | 380pF | |
| Output Capacitance(Coss) | 32pF | |
| Gate Charge(Qg) | 5.4nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0450 | $ 0.4500 |
| 100+ | $0.0397 | $ 3.9700 |
| 300+ | $0.0370 | $ 11.1000 |
| 3000+ | $0.0350 | $ 105.0000 |
| 6000+ | $0.0334 | $ 200.4000 |
| 9000+ | $0.0326 | $ 293.4000 |
