| Hersteller | |
| Hersteller-Teilenummer | HL2303 |
| EBEE-Teilenummer | E87420345 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 30V 1.9A 350mW 190mΩ@10V,1.9A 3V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0278 | $ 0.5560 |
| 200+ | $0.0229 | $ 4.5800 |
| 600+ | $0.0202 | $ 12.1200 |
| 3000+ | $0.0181 | $ 54.3000 |
| 9000+ | $0.0167 | $ 150.3000 |
| 21000+ | $0.0160 | $ 336.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | hongjiacheng HL2303 | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 75mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 25pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 350mW | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Current - Continuous Drain(Id) | 1.9A | |
| Ciss-Input Capacitance | 155pF | |
| Gate Charge(Qg) | 4nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0278 | $ 0.5560 |
| 200+ | $0.0229 | $ 4.5800 |
| 600+ | $0.0202 | $ 12.1200 |
| 3000+ | $0.0181 | $ 54.3000 |
| 9000+ | $0.0167 | $ 150.3000 |
| 21000+ | $0.0160 | $ 336.0000 |
