| Hersteller | |
| Hersteller-Teilenummer | 2N7002K |
| EBEE-Teilenummer | E822379475 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | None |
| Beschreibung | 60V 340mA 350mW 900mΩ@10V,500mA 2.5V@1mA 1 N-Channel SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 50+ | $0.0159 | $ 0.7950 |
| 500+ | $0.0128 | $ 6.4000 |
| 3000+ | $0.0100 | $ 30.0000 |
| 6000+ | $0.0090 | $ 54.0000 |
| 24000+ | $0.0081 | $ 194.4000 |
| 51000+ | $0.0076 | $ 387.6000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | hongjiacheng 2N7002K | |
| RoHS | ||
| Typ | N-Channel | |
| Konfiguration | - | |
| RDS(on) | 900mΩ@10V;1.1Ω@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 10pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 350mW | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V | |
| Current - Continuous Drain(Id) | 340mA | |
| Ciss-Input Capacitance | 40pF | |
| Gate Charge(Qg) | - |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 50+ | $0.0159 | $ 0.7950 |
| 500+ | $0.0128 | $ 6.4000 |
| 3000+ | $0.0100 | $ 30.0000 |
| 6000+ | $0.0090 | $ 54.0000 |
| 24000+ | $0.0081 | $ 194.4000 |
| 51000+ | $0.0076 | $ 387.6000 |
