| Hersteller | |
| Hersteller-Teilenummer | SVF7N65CDTR |
| EBEE-Teilenummer | E82930957 |
| Gehäuse | TO-252-2 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | TO-252-2 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.3584 | $ 1.7920 |
| 50+ | $0.2877 | $ 14.3850 |
| 150+ | $0.2573 | $ 38.5950 |
| 500+ | $0.2138 | $ 106.9000 |
| 2500+ | $0.1970 | $ 492.5000 |
| 5000+ | $0.1868 | $ 934.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | Hangzhou Silan Microelectronics SVF7N65CDTR | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 1.1Ω@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 9pF | |
| Pd - Power Dissipation | 89W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 7A | |
| Ciss-Input Capacitance | 789pF | |
| Gate Charge(Qg) | 21.2nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.3584 | $ 1.7920 |
| 50+ | $0.2877 | $ 14.3850 |
| 150+ | $0.2573 | $ 38.5950 |
| 500+ | $0.2138 | $ 106.9000 |
| 2500+ | $0.1970 | $ 492.5000 |
| 5000+ | $0.1868 | $ 934.0000 |
