| Hersteller | |
| Hersteller-Teilenummer | SVF4N60CAD |
| EBEE-Teilenummer | E8467746 |
| Gehäuse | TO-252 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | None |
| Beschreibung | TO-252 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.3132 | $ 1.5660 |
| 50+ | $0.2481 | $ 12.4050 |
| 150+ | $0.2202 | $ 33.0300 |
| 500+ | $0.1854 | $ 92.7000 |
| 2500+ | $0.1699 | $ 424.7500 |
| 5000+ | $0.1606 | $ 803.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | Hangzhou Silan Microelectronics SVF4N60CAD | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 2Ω@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 4.5pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 77W | |
| Drain to Source Voltage | 600V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Current - Continuous Drain(Id) | 4A | |
| Ciss-Input Capacitance | 433pF | |
| Output Capacitance(Coss) | 55pF | |
| Gate Charge(Qg) | 13nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.3132 | $ 1.5660 |
| 50+ | $0.2481 | $ 12.4050 |
| 150+ | $0.2202 | $ 33.0300 |
| 500+ | $0.1854 | $ 92.7000 |
| 2500+ | $0.1699 | $ 424.7500 |
| 5000+ | $0.1606 | $ 803.0000 |
