5% off
| Hersteller | |
| Hersteller-Teilenummer | 2SK3018 |
| EBEE-Teilenummer | E8181084 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 30V 100mA 8Ω@4V,10mA 350mW 1.5V@100uA 1 N-Channel SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 50+ | $0.0156 | $ 0.7800 |
| 500+ | $0.0122 | $ 6.1000 |
| 3000+ | $0.0096 | $ 28.8000 |
| 6000+ | $0.0085 | $ 51.0000 |
| 24000+ | $0.0074 | $ 177.6000 |
| 51000+ | $0.0069 | $ 351.9000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | Guangdong Hottech 2SK3018 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 8Ω@4V | |
| Betriebstemperatur - | - | |
| Reverse Transfer Capacitance (Crss-Vds) | 4pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 350mW | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Current - Continuous Drain(Id) | 100mA | |
| Ciss-Input Capacitance | 13pF | |
| Output Capacitance(Coss) | 9pF | |
| Gate Charge(Qg) | - |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 50+ | $0.0156 | $ 0.7800 |
| 500+ | $0.0122 | $ 6.1000 |
| 3000+ | $0.0096 | $ 28.8000 |
| 6000+ | $0.0085 | $ 51.0000 |
| 24000+ | $0.0074 | $ 177.6000 |
| 51000+ | $0.0069 | $ 351.9000 |
