| Hersteller | |
| Hersteller-Teilenummer | GBS65060TOB |
| EBEE-Teilenummer | E87426973 |
| Gehäuse | TO-247 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 650V 36A 50mΩ@10V,16.4A 192W 4.5V@1mA 1 N-channel TO-247 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $2.4483 | $ 2.4483 |
| 10+ | $2.3244 | $ 23.2440 |
| 30+ | $2.2498 | $ 67.4940 |
| 100+ | $2.1768 | $ 217.6800 |
| 500+ | $2.1418 | $ 1070.9000 |
| 1000+ | $2.1260 | $ 2126.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | GOSEMICON GBS65060TOB | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 55mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 4pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 192W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 50A | |
| Ciss-Input Capacitance | 4.3nF | |
| Output Capacitance(Coss) | 70pF | |
| Gate Charge(Qg) | 90nC |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $2.4483 | $ 2.4483 |
| 10+ | $2.3244 | $ 23.2440 |
| 30+ | $2.2498 | $ 67.4940 |
| 100+ | $2.1768 | $ 217.6800 |
| 500+ | $2.1418 | $ 1070.9000 |
| 1000+ | $2.1260 | $ 2126.0000 |
