10% off
| Hersteller | |
| Hersteller-Teilenummer | FS0102S |
| EBEE-Teilenummer | E83018480 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 100V 2A 1.2W 280mΩ@10V,2A 3V@250uA 1 N-Channel SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0446 | $ 0.4460 |
| 100+ | $0.0347 | $ 3.4700 |
| 300+ | $0.0298 | $ 8.9400 |
| 3000+ | $0.0271 | $ 81.3000 |
| 6000+ | $0.0241 | $ 144.6000 |
| 9000+ | $0.0227 | $ 204.3000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | FUXINSEMI FS0102S | |
| RoHS | ||
| RDS(on) | 310mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 17pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 1.2W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 2A | |
| Ciss-Input Capacitance | 330pF | |
| Gate Charge(Qg) | 5.3nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0446 | $ 0.4460 |
| 100+ | $0.0347 | $ 3.4700 |
| 300+ | $0.0298 | $ 8.9400 |
| 3000+ | $0.0271 | $ 81.3000 |
| 6000+ | $0.0241 | $ 144.6000 |
| 9000+ | $0.0227 | $ 204.3000 |
