10% off
| Hersteller | |
| Hersteller-Teilenummer | BSS84 |
| EBEE-Teilenummer | E83018484 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 50V 130mA 8Ω@10V,0.15A 225mW 2V@250uA 1 Piece P-Channel SOT-23(TO-236) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0207 | $ 0.4140 |
| 200+ | $0.0166 | $ 3.3200 |
| 600+ | $0.0142 | $ 8.5200 |
| 3000+ | $0.0114 | $ 34.2000 |
| 9000+ | $0.0102 | $ 91.8000 |
| 21000+ | $0.0095 | $ 199.5000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | FUXINSEMI BSS84 | |
| RoHS | ||
| RDS(on) | 10Ω@5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 5pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 225mW | |
| Drain to Source Voltage | 50V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Current - Continuous Drain(Id) | 130mA | |
| Ciss-Input Capacitance | 30pF | |
| Output Capacitance(Coss) | 10pF | |
| Gate Charge(Qg) | - |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0207 | $ 0.4140 |
| 200+ | $0.0166 | $ 3.3200 |
| 600+ | $0.0142 | $ 8.5200 |
| 3000+ | $0.0114 | $ 34.2000 |
| 9000+ | $0.0102 | $ 91.8000 |
| 21000+ | $0.0095 | $ 199.5000 |
