10% off
| Hersteller | |
| Hersteller-Teilenummer | 2N7002K |
| EBEE-Teilenummer | E8784615 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 60V 340mA 1.3Ω@10V,500mA 350mW 2.5V@250uA 1 N-Channel SOT-23(TO-236) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 50+ | $0.0118 | $ 0.5900 |
| 500+ | $0.0094 | $ 4.7000 |
| 3000+ | $0.0077 | $ 23.1000 |
| 6000+ | $0.0069 | $ 41.4000 |
| 24000+ | $0.0062 | $ 148.8000 |
| 51000+ | $0.0058 | $ 295.8000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | FUXINSEMI 2N7002K | |
| RoHS | ||
| RDS(on) | 1Ω@10V | |
| Betriebstemperatur - | - | |
| Reverse Transfer Capacitance (Crss-Vds) | 10pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 350mW | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 340mA | |
| Ciss-Input Capacitance | 40pF | |
| Output Capacitance(Coss) | 30pF | |
| Gate Charge(Qg) | - |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 50+ | $0.0118 | $ 0.5900 |
| 500+ | $0.0094 | $ 4.7000 |
| 3000+ | $0.0077 | $ 23.1000 |
| 6000+ | $0.0069 | $ 41.4000 |
| 24000+ | $0.0062 | $ 148.8000 |
| 51000+ | $0.0058 | $ 295.8000 |
