20% off
| Hersteller | |
| Hersteller-Teilenummer | 2N7002E |
| EBEE-Teilenummer | E82844157 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 60V 340mA 350mW 1Ω@10V,0.5A 2.5V@1mA 1 N-Channel SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0146 | $ 0.2920 |
| 200+ | $0.0115 | $ 2.3000 |
| 600+ | $0.0098 | $ 5.8800 |
| 3000+ | $0.0088 | $ 26.4000 |
| 9000+ | $0.0079 | $ 71.1000 |
| 21000+ | $0.0074 | $ 155.4000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | FUXINSEMI 2N7002E | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 5.3Ω@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 10pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 350mW | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 340mA | |
| Ciss-Input Capacitance | 40pF | |
| Output Capacitance(Coss) | 30pF |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0146 | $ 0.2920 |
| 200+ | $0.0115 | $ 2.3000 |
| 600+ | $0.0098 | $ 5.8800 |
| 3000+ | $0.0088 | $ 26.4000 |
| 9000+ | $0.0079 | $ 71.1000 |
| 21000+ | $0.0074 | $ 155.4000 |
