| Hersteller | |
| Hersteller-Teilenummer | HGQ024N04A |
| EBEE-Teilenummer | E81693660 |
| Gehäuse | PDFN5x6-8 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | LDFN-8-EP(5x6) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.3802 | $ 0.3802 |
| 10+ | $0.3374 | $ 3.3740 |
| 30+ | $0.3200 | $ 9.6000 |
| 100+ | $0.2978 | $ 29.7800 |
| 500+ | $0.2361 | $ 118.0500 |
| 1000+ | $0.2297 | $ 229.7000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | CRMICRO HGQ024N04A | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 3.25mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 75pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 78W | |
| Drain to Source Voltage | 40V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 134A | |
| Ciss-Input Capacitance | 3.02nF | |
| Output Capacitance(Coss) | 1.162nF | |
| Gate Charge(Qg) | 63.4nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.3802 | $ 0.3802 |
| 10+ | $0.3374 | $ 3.3740 |
| 30+ | $0.3200 | $ 9.6000 |
| 100+ | $0.2978 | $ 29.7800 |
| 500+ | $0.2361 | $ 118.0500 |
| 1000+ | $0.2297 | $ 229.7000 |
