| Hersteller | |
| Hersteller-Teilenummer | HGQ014N04B-G |
| EBEE-Teilenummer | E837889992 |
| Gehäuse | DFN-8(5x6) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | PDFN-8(5x6) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.3358 | $ 0.3358 |
| 10+ | $0.2915 | $ 2.9150 |
| 30+ | $0.2725 | $ 8.1750 |
| 100+ | $0.2487 | $ 24.8700 |
| 1000+ | $0.2424 | $ 242.4000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | CRMICRO HGQ014N04B-G | |
| RoHS | ||
| Typ | N-Channel | |
| Konfiguration | - | |
| RDS(on) | 1.4mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 81pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 96W | |
| Drain to Source Voltage | 40V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 200A | |
| Ciss-Input Capacitance | 5.131nF | |
| Output Capacitance(Coss) | 2.238nF | |
| Gate Charge(Qg) | 93.7nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.3358 | $ 0.3358 |
| 10+ | $0.2915 | $ 2.9150 |
| 30+ | $0.2725 | $ 8.1750 |
| 100+ | $0.2487 | $ 24.8700 |
| 1000+ | $0.2424 | $ 242.4000 |
