| Hersteller | |
| Hersteller-Teilenummer | SI2302 |
| EBEE-Teilenummer | E8344009 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 20V 3A 1.25W 59mΩ@2.5V,2.5A 1.5V@250uA 1 N-Channel SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0320 | $ 0.6400 |
| 200+ | $0.0255 | $ 5.1000 |
| 600+ | $0.0219 | $ 13.1400 |
| 3000+ | $0.0177 | $ 53.1000 |
| 9000+ | $0.0158 | $ 142.2000 |
| 21000+ | $0.0148 | $ 310.8000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | BORN SI2302 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 45mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 33pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 1.25W | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Current - Continuous Drain(Id) | 3A | |
| Ciss-Input Capacitance | 340pF | |
| Output Capacitance(Coss) | 115pF | |
| Gate Charge(Qg) | [email protected] |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0320 | $ 0.6400 |
| 200+ | $0.0255 | $ 5.1000 |
| 600+ | $0.0219 | $ 13.1400 |
| 3000+ | $0.0177 | $ 53.1000 |
| 9000+ | $0.0158 | $ 142.2000 |
| 21000+ | $0.0148 | $ 310.8000 |
