| Hersteller | |
| Hersteller-Teilenummer | 2N7002KW |
| EBEE-Teilenummer | E82847214 |
| Gehäuse | SOT-323 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 60V 300mA 2.3Ω@4.5V,0.20A 300mW 2.5V@250uA 1 N-Channel SOT-323-3 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0237 | $ 0.4740 |
| 200+ | $0.0186 | $ 3.7200 |
| 600+ | $0.0157 | $ 9.4200 |
| 3000+ | $0.0139 | $ 41.7000 |
| 9000+ | $0.0124 | $ 111.6000 |
| 21000+ | $0.0116 | $ 243.6000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | BORN 2N7002KW | |
| RoHS | ||
| Typ | N-Channel | |
| Konfiguration | - | |
| RDS(on) | 2.3Ω@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 4.2pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 510mW | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 300mA | |
| Ciss-Input Capacitance | 18.5pF | |
| Gate Charge(Qg) | 500pC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0237 | $ 0.4740 |
| 200+ | $0.0186 | $ 3.7200 |
| 600+ | $0.0157 | $ 9.4200 |
| 3000+ | $0.0139 | $ 41.7000 |
| 9000+ | $0.0124 | $ 111.6000 |
| 21000+ | $0.0116 | $ 243.6000 |
