| Hersteller | |
| Hersteller-Teilenummer | BLP065N08G-D |
| EBEE-Teilenummer | E83031694 |
| Gehäuse | TO-252 |
| Kundennummer | |
| EDA-Modelle | |
| Beschreibung | 85V 80A 156.2W 6.5mΩ@10V,50A 4V@250uA TO-252 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.4572 | $ 0.4572 |
| 10+ | $0.3727 | $ 3.7270 |
| 30+ | $0.3320 | $ 9.9600 |
| 100+ | $0.2897 | $ 28.9700 |
| 500+ | $0.2173 | $ 108.6500 |
| 1000+ | $0.2052 | $ 205.2000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 6.5mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 11.7pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 156.2W | |
| Drain to Source Voltage | 85V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 80A | |
| Ciss-Input Capacitance | 3.219nF | |
| Output Capacitance(Coss) | 490pF | |
| Gate Charge(Qg) | 61.2nC |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.4572 | $ 0.4572 |
| 10+ | $0.3727 | $ 3.7270 |
| 30+ | $0.3320 | $ 9.9600 |
| 100+ | $0.2897 | $ 28.9700 |
| 500+ | $0.2173 | $ 108.6500 |
| 1000+ | $0.2052 | $ 205.2000 |
