| Hersteller | |
| Hersteller-Teilenummer | BLP032N10-T |
| EBEE-Teilenummer | E841427363 |
| Gehäuse | TOLL-8 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | TOLL-8 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.6240 | $ 0.6240 |
| 10+ | $0.5081 | $ 5.0810 |
| 30+ | $0.4494 | $ 13.4820 |
| 100+ | $0.3922 | $ 39.2200 |
| 500+ | $0.3573 | $ 178.6500 |
| 1200+ | $0.3382 | $ 405.8400 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | BL(Shanghai Belling) BLP032N10-T | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 2.6mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 150pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 208W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 184A | |
| Ciss-Input Capacitance | 6.6nF | |
| Output Capacitance(Coss) | 1.594nF | |
| Gate Charge(Qg) | 114nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.6240 | $ 0.6240 |
| 10+ | $0.5081 | $ 5.0810 |
| 30+ | $0.4494 | $ 13.4820 |
| 100+ | $0.3922 | $ 39.2200 |
| 500+ | $0.3573 | $ 178.6500 |
| 1200+ | $0.3382 | $ 405.8400 |
