| Hersteller | |
| Hersteller-Teilenummer | BLM10P03-D |
| EBEE-Teilenummer | E82924845 |
| Gehäuse | TO-252-2L |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 30V 40A 23.2W 8mΩ@10V,17A 1.5V@250uA 1 Piece P-Channel TO-252-2 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.2172 | $ 1.0860 |
| 50+ | $0.1705 | $ 8.5250 |
| 150+ | $0.1505 | $ 22.5750 |
| 500+ | $0.1256 | $ 62.8000 |
| 2500+ | $0.1145 | $ 286.2500 |
| 5000+ | $0.1078 | $ 539.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | BL(Shanghai Belling) BLM10P03-D | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 15mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 270pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 23.2W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Current - Continuous Drain(Id) | 40A | |
| Ciss-Input Capacitance | 2nF | |
| Output Capacitance(Coss) | 290pF | |
| Gate Charge(Qg) | 36nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.2172 | $ 1.0860 |
| 50+ | $0.1705 | $ 8.5250 |
| 150+ | $0.1505 | $ 22.5750 |
| 500+ | $0.1256 | $ 62.8000 |
| 2500+ | $0.1145 | $ 286.2500 |
| 5000+ | $0.1078 | $ 539.0000 |
