| Hersteller | |
| Hersteller-Teilenummer | AUP056N08BGL |
| EBEE-Teilenummer | E818722993 |
| Gehäuse | TO-220 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 85V 65A 4.9mΩ 158W 2.1V 1 N-channel TO-220 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.4467 | $ 0.4467 |
| 10+ | $0.3960 | $ 3.9600 |
| 50+ | $0.3715 | $ 18.5750 |
| 100+ | $0.3454 | $ 34.5400 |
| 500+ | $0.3316 | $ 165.8000 |
| 1000+ | $0.3239 | $ 323.9000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | ANHI AUP056N08BGL | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 5.6mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 107.1pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 158W | |
| Drain to Source Voltage | 85V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 65A | |
| Ciss-Input Capacitance | 4.553nF | |
| Output Capacitance(Coss) | 1.215nF | |
| Gate Charge(Qg) | 63.7nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.4467 | $ 0.4467 |
| 10+ | $0.3960 | $ 3.9600 |
| 50+ | $0.3715 | $ 18.5750 |
| 100+ | $0.3454 | $ 34.5400 |
| 500+ | $0.3316 | $ 165.8000 |
| 1000+ | $0.3239 | $ 323.9000 |
