| Hersteller | |
| Hersteller-Teilenummer | ASM65R280E |
| EBEE-Teilenummer | E822470099 |
| Gehäuse | DFN-8(8x8) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 700V 15A 280mΩ@10V,5.5A 126W 4.2V@250uA DFN-8(8x8) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.8925 | $ 0.8925 |
| 10+ | $0.8055 | $ 8.0550 |
| 30+ | $0.7580 | $ 22.7400 |
| 100+ | $0.7042 | $ 70.4200 |
| 500+ | $0.6805 | $ 340.2500 |
| 1000+ | $0.6694 | $ 669.4000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | ANHI ASM65R280E | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 280mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 1.21pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 126W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4.2V | |
| Current - Continuous Drain(Id) | 15A | |
| Ciss-Input Capacitance | 953.8pF | |
| Gate Charge(Qg) | 19.4nC |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.8925 | $ 0.8925 |
| 10+ | $0.8055 | $ 8.0550 |
| 30+ | $0.7580 | $ 22.7400 |
| 100+ | $0.7042 | $ 70.4200 |
| 500+ | $0.6805 | $ 340.2500 |
| 1000+ | $0.6694 | $ 669.4000 |
